• 专利标题:   Method for transferring graphene used for e.g. FET to flexible substrate, involves adhering metal substrate on flexible substrate by hot pressing process, removing metal residue using solvent, and drying metal substrate.
  • 专利号:   JP2016132610-A
  • 发明人:   TANEMURA M, KALITA G
  • 专利权人:   UNIV NAGOYA
  • 国际专利分类:   C01B031/02, C23C016/01, C23C016/26
  • 专利详细信息:   JP2016132610-A 25 Jul 2016 C01B-031/02 201651 Pages: 8 Japanese
  • 申请详细信息:   JP2016132610-A JP010454 22 Jan 2015
  • 优先权号:   JP010454

▎ 摘  要

NOVELTY - The method involves forming a graphene (12) film on a metal substrate (14) by chemical vapor deposition (CVD) method. The metal substrate is adhered on the flexible substrate (16) by low temperature hot pressing process. The metal substrate is removed. The metal residue is removed using the solvent, and the metal substrate is dried. USE - Method for transferring graphene used for transparent electrode and electronic device e.g. FET to flexible substrate such as cellulose-acetate substrate. ADVANTAGE - The graphene can be easily and effectively transferred to the flexible substrate, without using an organic solvent. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the graphene transfer process. Graphene (12) Metal substrate (14) Flexible substrate (16)