▎ 摘　　要

NOVELTY - Preparing semiconductor graphene nanoribbons comprises (i) annealing the single-walled carbon nanotubes in air, then adding concentrated sulfuric acid and stirring to obtain a single-walled carbon nanotube suspension, (ii) adding potassium permanganate to the single-walled carbon nanotube suspension obtained in the step (i) for reaction, pouring the reaction solution into ice water and filtering, drying to obtain defective single-walled carbon nanotubes, (iii) adding the defective single-walled carbon nanotubes obtained in the step (ii) to an aqueous solution of sodium dodecylbenzene sulfonate for ultrasonic treatment, and filtering, and drying to obtain semiconductor graphene nanoribbons, and (iv) annealing the semiconductor graphene nanoribbons obtained in the step (iii) at a high temperature in an inert atmosphere to obtain high-quality semiconductor graphene nanoribbons. USE - The method is useful for preparing semiconductor graphene nanoribbons, which is useful for preparing field effect transistors (claimed). ADVANTAGE - The method: is simple and easy to prepare on a large scale, and the obtained semiconductor graphite nanobelt has high quality and good uniformity and photoluminescence effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for semiconductor graphene nanoribbons prepared by above mentioned method.