▎ 摘　　要

NOVELTY - A graphene resonant gas sensor preparing method involves depositing a silicon dioxide dielectric layer on the silicon substrate, utilizing an absolute ethanol to clean the silicon dioxide dielectric layer, spin-coating polyphenyl dialdehyde on the surface of silicon dioxide dielectric layer, etching three rectangular grooves on the polyphthalamide, cutting off a gate metal electrode, preparing atomic vacancies in the graphene film, spin-coating polyphenyl dialdehyde on the surface of the graphene film, and etching a circular through hole on the polyphthalamide, utilizing a nano three dimensional structure direct writing machine to remove the remaining polyphthalamide, cutting the graphene resonance beam size through focused ion beam and locating the deposited transition layer metal, transferring the graphene resonance beam to the source metal electrode, and modifying the polymer coating on the transition layer metal of the graphene resonance beam to obtain the finished product. USE - Method for preparing graphene resonant gas sensor used for detecting acetone (claimed). ADVANTAGE - The method enables preparing graphene resonant gas sensor with high sensitivity and improved quality of surface contact of transition metal layer. DETAILED DESCRIPTION - A graphene resonant gas sensor preparing method involves depositing a silicon dioxide dielectric layer on the silicon substrate by utilizing a chemical vapor deposition method, and utilizing an absolute ethanol and deionized water to ultrasonically clean the silicon dioxide dielectric layer, spin-coating polyphenyl dialdehyde on the surface of silicon dioxide dielectric layer, etching three rectangular grooves on the polyphenyl dialdehyde by utilizing a nano three dimensional structure direct write machine, utilizing EBE technology to firstly deposit the rectangular grooves in the above rectangular grooves, depositing a layer of titanium, followed by a layer of gold-platinum alloy material, after the deposition is completed, removing the remaining polyphenyl dialdehyde by utilizing a nano three dimensional structure direct writing machine, and utilizing an obtained metal block as the source metal electrode, the gate metal electrode and drain metal electrode, cutting off a part of the gate metal electrode with a focused ion beam, generating a height difference between the gate metal electrode, the source metal electrode and the drain metal electrode, preparing a single-layer graphene film by mechanical peeling, and preparing n C atomic vacancies in the graphene film for utilizing a transmission electron microscope, locating the C atomic vacancies in the center of the graphene film, spin-coating polyphenyl dialdehyde on the surface of the graphene film in the range of 10-20 nm, and etching a circular through hole on the polyphenyl dialdehyde for utilizing a nano three dimensional structure direct write machine, locating the through hole of C atom vacancy and passing EBE deposits a metal material as the transition layer metal in the circular through hole, and utilizing a nano three dimensional structure direct writing machine to remove the remaining polyphthalamide, and finally cutting the required graphene resonance beam size through focused ion beam and locating the deposited transition layer metal at the center of the graphene resonance beam, transferring the graphene resonance beam to the source metal electrode and the drain metal electrode by utilizing a wet transfer method, and modifying the polymer coating on the transition layer metal of the graphene resonance beam to obtain the finished product.