▎ 摘　　要

NOVELTY - The transistor has a gate electrode whose top part is provided with a wearable low-resistance silicon layer. A gate oxide layer is adhered to a graphite layer. A source region and a drain region are arranged on the graphite layer. A channel is arranged between the source region and the drain region. A low resistivity silicon layer is arranged on a silicon carbide substrate. A graphene-containing layer is provided with a silicon carbide film. The graphene-containing layer is made of a two-dimensional crystal material. USE - Silicon stone graphene field effect transistor (FET). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a silicon stone graphene field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a silicon stone graphene field effect transistor.