▎ 摘　　要

NOVELTY - Preparation of high-quality graphene film, involves vertically placing N-substrates, placing a quartz rod between the substrates to form confinement channel structures without adhesion between the substrates at high temperature, placing the growth substrate in a chemical vapor deposition tubular furnace, introducing a gas for high-temperature annealing pretreatment, introducing a carbon source gas, in-situ growing graphene on the substrate, stopping introduction of carbon source gas after growth is completed, continuously introducing the gas until it is cooled to normal temperature, and taking out. USE - Preparation of high-quality graphene film (claimed). ADVANTAGE - The method reduces roughness of substrate surface and nucleation density of the substrate surface, creates good condition for the growth of high-quality graphene, and enables batch processing.