• 专利标题:   Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.
  • 专利号:   US2020317511-A1
  • 发明人:   SHIN H, CHOI J, WOO Y, YOON S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B032/186, C23C016/02, C23C016/26, C23C016/56, H01L021/02
  • 专利详细信息:   US2020317511-A1 08 Oct 2020 B82Y-030/00 202086 Pages: 12 English
  • 申请详细信息:   US2020317511-A1 US906214 19 Jun 2020
  • 优先权号:   KR043074, KR126279

▎ 摘  要

NOVELTY - Crystalline graphene is obtained by performing a first thermal treatment involving supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding the activated carbon on the inorganic substrate to grow the crystalline graphene. The crystalline graphene has a D-band to G-band peak intensity ratio (ID/IG) of less than or equal to 0.5. USE - The crystalline graphene is used in a graphene-on-substrate for an electronic device (all claimed). The graphene-on-substrate is used as a transparent electrode for display devices or solar cells, and used as a channel for memory devices, sensors or electronic paper. ADVANTAGE - The crystalline graphene has high transparency and high conductivity, and improves the transmission of light. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene-on-substrate comprising an inorganic substrate, and crystalline graphene arranged on at least one surface of the inorganic substrate, where the crystalline graphene is directly grown on the inorganic substrate by a growing process.