• 专利标题:   Conductive film, useful in a semiconductor device such as a photoelectric conversion device including a solar cell, comprises a fine catalytic metal particle as a junction, and a graphene extending in a network form from the junction.
  • 专利号:   US2013249093-A1, JP2013201373-A, JP5668009-B2, US9000591-B2
  • 发明人:   YAMAZAKI Y, WADA M, SAITO T, SAKAI T
  • 专利权人:   TOSHIBA KK, TOSHIBA KK, TOSHIBA KK
  • 国际专利分类:   H01L023/498, C01B031/02, H01B005/14, H01L021/28, H01L021/285, H01L021/3205, H01L021/768, H01L023/532, B82Y030/00, H01L023/48
  • 专利详细信息:   US2013249093-A1 26 Sep 2013 H01L-023/498 201366 Pages: 11 English
  • 申请详细信息:   US2013249093-A1 US768567 15 Feb 2013
  • 优先权号:   JP070004

▎ 摘  要

NOVELTY - The conductive film comprises a fine catalytic metal particle as a junction, a graphene extending in a network form from the junction, and a graphene, which is free from the fine catalytic metal particle, stacked over the graphene extending in the network form from the junction. The conductive film has a three-dimensional structure. USE - The conductive film is useful in a semiconductor device (claimed) such as a large scale integration or a photoelectric conversion device including a solar cell, and useful as a three-dimensional wiring containing an integrated combination of transverse and vertical wirings. ADVANTAGE - The conductive film improves current-density resistance, mobility, heat resistance and mechanical strength of the semiconductor device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a semiconductor device. Semiconductor device (11) Insulation film (12) Catalytic metal portions (13) Bonding portions (14) Fine catalytic metal particles. (15)