• 专利标题:   Silicon-based negative electrode comprises silicon-based core, carbon layer covering silicon-based core and phenyl compound layer covering carbon layer.
  • 专利号:   CN112786871-A, CN112786871-B, WO2022174649-A1
  • 发明人:   CHEN Y
  • 专利权人:   OPPO GUANGDONG MOBILE COMMUNICATIONS CO, OPPO GUANGDONG MOBILE TELECOM CORP LTD, GUANGDONG OPPO MOBILE TELECOM CORP LTD
  • 国际专利分类:   H01M004/133, H01M004/134, H01M004/36, H01M004/38, H01M004/583, H01M004/60, H01M004/62, H01M004/66
  • 专利详细信息:   CN112786871-A 11 May 2021 H01M-004/36 202151 Pages: 17 Chinese
  • 申请详细信息:   CN112786871-A CN10188225 18 Feb 2021
  • 优先权号:   CN10188225

▎ 摘  要

NOVELTY - Silicon-based negative electrode comprises a silicon-based core, carbon layer covering silicon-based core and a phenyl compound layer covering carbon layer. The phenyl compound in phenyl compound layer is (I). USE - Silicon-based negative electrode. ADVANTAGE - The silicon-based negative electrode material has stable performance and high cycle efficiency, which is beneficial to its wide application. It also provides a method for preparing a silicon-based negative electrode material, a negative electrode, a battery and an electronic device. DETAILED DESCRIPTION - Silicon-based negative electrode comprises a silicon-based core, carbon layer covering silicon-based core and a phenyl compound layer covering carbon layer. The phenyl compound in phenyl compound layer is formula (I). R1=carbon-carbon double bond or a carbon-carbon triple bond; and R2, R3, R4, R5, and R6=organic acid group. . An INDEPENDENT CLAIM is included for a method for preparing a silicon-based negative electrode material, which involves: (A) forming a carbon layer on the surface of the silicon-based core; and (B) forming phenyl compound layer on the surface of the carbon layer to obtain a silicon-based negative electrode material, where silicon-based negative electrode material includes a silicon-based core, the carbon layer coating the silicon-based core, and the phenyl compound layer coating the carbon layer.