• 专利标题:   Synthesizing graphene involves immersing flat nickel metal substrate into homogenized precursor solution containing organic solvent and metal salt to obtain finished product.
  • 专利号:   MX2013006079-A1
  • 发明人:   YOSHIDA M M, MADRID P A, BUSTAMANTE F P, BUSTAMANTE R P
  • 专利权人:   CENT INVESTIGACION EN MATERIALES AVANZAD
  • 国际专利分类:   C01B031/04, C23C016/01, C23C016/26
  • 专利详细信息:   MX2013006079-A1 01 Dec 2014 C01B-031/04 201555 Pages: 22 Spanish
  • 申请详细信息:   MX2013006079-A1 MX006079 30 May 2013
  • 优先权号:   MX006079

▎ 摘  要

NOVELTY - Synthesizing graphene involves preparing homogenized precursor solution containing organic solvent and a metal salt having electronegativity less than 1.63. The prepared precursor solution. A flat nickel metal or other metal substrate is placed inside a tube at 900 degrees C or more. The tube comprising metal substrate is inserted within a heating furnace, where a flow of inert gas (Argon, Neon or Helium) for purging the system is established for at least 15 minutes. The heating furnace is then vaccumized to take off metal substrate. USE - Method for synthesizing graphene by aerosol-assisted chemical vapor deposition (claimed). ADVANTAGE - The method enable to synthesize graphene by aerosol-assisted chemical vapor deposition in an efficient manner. The high temperature decomposes the organic solvent promoting diffusion of carbon below the substrate surface to form the graphene layer during the cooling phase. The size of the graphene layer and the number of atomic layers can be changed as per requirement. The graphene layer is easily detached from the metal substrate and thus can be placed on any surface for later use. DETAILED DESCRIPTION - Synthesizing graphene involves preparing homogenized precursor solution containing organic solvent and a metal salt having electronegativity less than 1.63. The prepared precursor solution. A flat nickel metal or other metal substrate is placed inside a tube at 900 degrees C or more. The tube comprising metal substrate is inserted within a heating furnace, where a flow of inert gas (Argon, Neon or Helium) for purging the system is established for at least 15 minutes. The heating furnace is then vaccumized to take off metal substrate. The obtained homogenized precursor solution is introduced into a spray chamber, and then applied on the metal substrate to start the deposition of graphene.