▎ 摘　　要

NOVELTY - The method involves preparing a graphene film using chemical vapor deposition growth. The graphene film is transferred to a prepared surface of an oxide substrate. A graphene strip structure is formed on a graphene film surface. A metal is formed on two metal electrodes. Two metal electrodes are fixed at two ends of the graphene film surface. A quantum dots is patterned on surface of the graphene thin film. Surface of the substrate is formed by an oxide layer, where the material of the substrate is made of a silicon, glass, quartz. USE - Method for preparing a zero-bias working graphene photoelectric device. ADVANTAGE - The method enables improving practicability, service life and measuring precision, and realizing simple processing. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a zero-bias working graphene photoelectric device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing a zero-bias working graphene photoelectric device. (Drawing includes non-English language text).