• 专利标题:   Patterning method of graphene used in graphene device, involves processing ring element of graphene oxide for patternizing laser irradiated in phase, during rising condition.
  • 专利号:   KR2012033148-A, KR1400961-B1
  • 发明人:   CHOI K S, KIM S Y, KWON G C, PARK Y S
  • 专利权人:   UNIV CHUNGANG IND ACAD COOP FOUND
  • 国际专利分类:   B01J019/08, B82B003/00, C01B031/02, H01L021/263
  • 专利详细信息:   KR2012033148-A 06 Apr 2012 C01B-031/02 201311 Pages: 13
  • 申请详细信息:   KR2012033148-A KR094759 29 Sep 2010
  • 优先权号:   KR094759

▎ 摘  要

NOVELTY - The method involves processing ring element of graphene oxide for patternizing laser irradiated in the phase, during the rising condition. The single layer or multi layer structure is made of silicone, silica, glass, and graphene oxide paper. The substrate is made of silicon oxide, gallium oxide and magnesium oxide. USE - Patterning method of graphene used in graphene device (all claimed). ADVANTAGE - The imperfection ring element of the graphene oxide cannot be induced, thus performing the nano pattern about the graphene effectively with excellent processing efficiency. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) patterned graphene; and (2) graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the patterning of graphene. (Drawing includes non-English language text)