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  • 专利标题:   Substrate used for electron and optical integrated circuit apparatus, has graphene layer which is grown parallel with respect to surface of substrate and atomic layer of metal oxide provided on other surface of substrate.
  • 专利号:   JP2010153793-A, US2010200839-A1, US8476739-B2, JP5453045-B2
  • 发明人:   HIROKA M, KYOTANI T, OKAI M, ORIKASA H, ORIGASA H, HIROOKA M
  • 专利权人:   HITACHI LTD, OKAI M, HIROOKA M, KYOTANI T, ORIKASA H, HITACHI LTD, HITACHI LTD
  • 国际专利分类:   H01L021/20, H01L029/786, H01L029/12, H01L031/0256, H01L033/02, H01L023/58
  • 专利详细信息:   JP2010153793-A 08 Jul 2010 H01L-021/20 201046 Pages: 17 Japanese
  • 申请详细信息:   JP2010153793-A JP242092 21 Oct 2009
  • 优先权号:   JP300556, JP242092

▎ 摘　　要

NOVELTY - A substrate (100) has a graphene layer (103) which is grown parallel with respect to surface of the substrate and an atomic layer of metal oxide provided on the surface of the substrate which opposes the graphene layer. The interlayer distance of the layer adjacent to the substrate and atomic layer of metal oxide is 0.34 nm or less. USE - Substrate is used for electron and optical integrated circuit apparatus (claimed). ADVANTAGE - The substrate is manufactured, economically. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) electron and optical integrated circuit apparatus; and (2) manufacture of substrate. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the substrate. Substrate with graphene layer (100) Silicon single crystal substrate (101) Aluminum oxide film (102) Graphene layer (103) Substrate with atomic layer in outermost surface (110)