▎ 摘　　要

NOVELTY - The hetero junction structure has a substrate layer (1) and the first rectangular annular metal electrode layer are arranged on the substrate is provided with a rectangular window in the middle. The substrate layer forms a rectangle groove with the rectangular window. The rectangular groove is provided with the graphene layer (2) and the bottom of the graphene layer from the substrate layer contact edge extends upwards to the first top of the rectangular annular metal electrode (4) extends to the outer bent along inner wall of the first rectangular ring-shaped gold electrode and portion of the graphene layer is covered on the upper surface of the first rectangular ring-shaped electrode. The graphene layer is located on upper end portion of the rectangular groove is provided with a P-type doping nanometer germanium film layer (3). The nanometer germanium thin film layer of the upper end is provided with a second rectangular ring shaped gold electrode (5). USE - Fermi-adjustable graphene hetero junction structure. ADVANTAGE - The problem that the chemical doping mode regulates the structural damage caused by the graphene Fermi level to the graphene material and the low light absorption rate are avoided. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing graphene hetero junction structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the Fermi-adjustable graphene hetero junction structure. Substrate layer (1) Graphene layer (2) P-type doping nanometer germanium film (3) Rectangular annular metal electrode (4) Second rectangular ring shaped gold electrode (5)