• 专利标题:   Doped graphene composition material comprises e.g. graphene functional layer contains metal compound, metal simple substance, nitrogen-containing functional group laser induced graphene, sulfur-containing functional group laser induced graphene, base material layer containing precursor.
  • 专利号:   CN115141403-A
  • 发明人:   HE X, XIE H, ZHAO N
  • 专利权人:   BEIJING HAISU TECHNOLOGY CO LTD
  • 国际专利分类:   C01B032/184, C08J005/18, C08J007/06, C08J007/12, C08L001/02, C08L097/00
  • 专利详细信息:   CN115141403-A 04 Oct 2022 C08J-007/06 202303 Chinese
  • 申请详细信息:   CN115141403-A CN10960536 11 Aug 2022
  • 优先权号:   CN10960536

▎ 摘  要

NOVELTY - Doped graphene composition material comprises a base material layer, a graphene functional layer, graphene functional layer containing laser induced graphene, where the graphene functional layer contains metal compound, metal simple substance, nitrogen-containing functional group laser induced graphene, phosphorus-containing functional group laser induced graphene, sulfur-containing functional group laser induced graphene, or boron-containing functional group laser induced graphene, the base material layer containing precursor, the grain diameter of precursor is 50-500 nm. USE - Used as doped graphene composition material. ADVANTAGE - The doped laser graphene material has excellent performance, has high surface capacitance, has high capacitance, has low surface resistance and has strong selectivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a laser graphene doping method comprising using laser to irradiate laser induced graphene substrate to prepare doped laser graphene material, the wavelength range of the laser is 9.3-10.6 μm, 625-740 nm, 450-480nm and 1053nm, the laser-induced graphene substrate surface bearing the laser intensity range is 3 J/cm2-40J/cm2, the laser-induced graphene substrate by doping, the thickness of the laser-induced graphene substrate is 0.02-0.5 mm.