• 专利标题:   Preparing graphene film comprises forming a passivation layer on metal substrate, forming hole in passivation layer, forming a graphene film on a hole exposing the metal substrate and covering passivation layer by graphene film.
  • 专利号:   CN110629188-A
  • 发明人:   TIAN X, HE Y, ZHAO G, LI L, MENG Y, GUO T
  • 专利权人:   ENN SOLAR ENERGY CO LTD
  • 国际专利分类:   C01B032/186, C23C016/04, C23C016/26, C23C016/513
  • 专利详细信息:   CN110629188-A 31 Dec 2019 C23C-016/26 202006 Pages: 9 Chinese
  • 申请详细信息:   CN110629188-A CN10663151 25 Jun 2018
  • 优先权号:   CN10663151

▎ 摘  要

NOVELTY - Preparing graphene film comprises forming a passivation layer on a metal substrate, forming a hole in the passivation layer so that the metal substrate leaks out through the hole, forming a graphene film on a hole exposing the metal substrate, and covering passivation layer by graphene film. USE - The method is useful for preparing graphene film. ADVANTAGE - The method achieves selective passivation of the metal substrate, controls the area and number of areas that make the metal substrate catalytic and the growth rate of the graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for device comprising graphene film. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the process of preparing graphene film (Drawing includes non-English language text).