▎ 摘　　要

NOVELTY - The transistor has a material heterogeneous grid provided with a two conductive metal materials (1, 2). An intrinsic graphene material (5) is provided with a conduction channel, which is fixed in two gate electrodes and a dielectric material layer (3). An oxide layer is located in the source region (4), which is provided with a drain region (6). An intrinsic graphene material is provided with a drain region. The intrinsic graphene material is provided with a conductive channel. An underlap region (7) is provided with the source region and the drain region. USE - Double-material hetero-gate field effect transistor. ADVANTAGE - The transistor has better gate control ability, and effectively inhibits short channel effect and provides band tunneling and hot carrier effect. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a double-material hetero-gate field effect transistor. Conductive metal materials (1, 2) Dielectric material layer (3) Source region (4) Intrinsic graphene material (5) Drain region (6) Underlap region (7)