▎ 摘　　要

NOVELTY - The method comprises forming a multilayered member including a sacrificial substrate, a sacrificial layer and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate (310), and combining the first and second laminates such that the semiconductor layer contacts the graphene layer. USE - The method is useful for manufacturing a graphene semiconductor device that is useful in an organic light emitting display and a memory (all claimed) such as a resistive random access memory, where the graphene semiconductor device includes a graphene thin film diode. ADVANTAGE - The method enables easy manufacture of the thin graphene semiconductor device with good thermal and electrical conductivity and high physical and chemical stability. DETAILED DESCRIPTION - The method comprises forming a multilayered member including a sacrificial substrate, a sacrificial layer and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate (310), combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, removing the transfer substrate, forming a second electrode on an exposed surface of the graphene layer, forming a light emitting layer, forming a third electrode on the light emitting layer, and forming a resistive material layer and the third electrode on the first and second electrodes. The step of forming the multilayered member includes depositing a conductor layer on the semiconductor layer, patterning the conductor layer to form a first electrode, and patterning the semiconductor layer to form a semiconductor member. The step of combining the first laminate and the second laminate includes contacting the semiconductor member with the graphene layer, and aligning a gate electrode (330) with the semiconductor member. The step of forming the second laminate includes forming the gate electrode on the base substrate, forming a gate insulating layer (340) on the gate electrode and the base substrate, forming the graphene layer on the gate insulating layer, and forming a subsidiary insulating layer (320) between the base substrate and the gate electrode. The light emitting layer is provided on the second electrode when the semiconductor layer includes an N-type semiconductor, and the light emitting layer is provided on the first electrode when the semiconductor layer includes a P-type semiconductor. The resistive material layer has a resistance that varies based on a voltage across ends of the resistive material layer. The base substrate includes an insulator and a semiconductor, and the gate electrode contacts the base substrate. INDEPENDENT CLAIMS are included for: (1) a graphene semiconductor device; (2) an organic light emitting display; and (3) a memory. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a graphene thin film diode. Base substrate (310) Subsidiary insulating layer (320) Gate electrode (330) Gate insulating layer (340) Graphene member. (350)