• 专利标题:   Preparation of graphene monolayer by depositing small molecule of p-xylene on surface of copper foil as solid carbon source, and reacting solid carbon source and clean copper foil into reaction device with reducing gas and protective gas.
  • 专利号:   CN108793137-A
  • 发明人:   CHENG C, HUANG B, MAO X, DONG Y, ZHANG H, CHEN R, CHEN H
  • 专利权人:   INST SEMICONDUCTORS CHINESE ACAD SCI
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN108793137-A 13 Nov 2018 C01B-032/186 201901 Pages: 7 Chinese
  • 申请详细信息:   CN108793137-A CN10999694 29 Aug 2018
  • 优先权号:   CN10999694

▎ 摘  要

NOVELTY - Preparation of graphene monolayer comprises depositing small molecule of p-xylene on surface of copper foil as solid carbon source, in which p-xylene is formed by cleavage of parylene; placing solid carbon source and clean copper foil into reaction device with double temperature zone, in which solid carbon source is placed in low temperature zone and clean copper foil is placed in high temperature zone; vacuuming reaction device and heating high temperature zone to set temperature while introducing reducing gas through protective gas to reduce copper oxide on surface of copper foil; raising temperature in low temperature zone to set temperature to volatilize solid carbon source into copper foil region to form and continuously grown graphene nucleus; reducing temperature to room temperature; turning off protective gas and reducing gas; and cooling high temperature region at room temperature to complete graphene growth. USE - Preparation of graphene monolayer. ADVANTAGE - The use of parylene can reduce preparation cost of graphene, accelerates improvement of single-layer graphene preparation, and improves potential of single-layer graphene industrialization. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a process for preparing graphene monolayer (Drawing includes non-English language text).