▎ 摘　　要

NOVELTY - A graphene/tungsten disulfide-tungsten diselenide heterojunction/graphene photoelectric detector has a structure of electrode/graphene/tungsten disulfide-tungsten diselenide heterojunction/graphene/electrode. The graphene is not in contact with the tungsten disulfide-tungsten diselenide heterojunction, and the electrode is not in contact with tungsten disulfide or tungsten diselenide heterojunction. USE - Graphene/tungsten disulfide-tungsten diselenide heterojunction/graphene photoelectric detector is used in solar battery, light-emitting diode, photocatalyst biological sensor and light detector. ADVANTAGE - The method enables to prepare graphene/tungsten disulfide-tungsten selenide heterojunction/graphene photoelectric detector, which has improved switch ratio, and is good for pushing the two-dimensional tungsten disulfide, tungsten selenide and other two-dimensional material in the field of light detection and further development and application. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the graphene/tungsten disulfide-tungsten diselenide heterojunction/graphene photoelectric detector, which involves sequentially soaking a silica/silicon substrate in acetone solution, isopropanol solution and deionized water, ultrasonically processing the substrate, mechanically peeling off tungsten disulfide and tungsten diselenide with tape, selecting thin layers of tungsten disulfide and tungsten diselenide with thickness of 1-50 nm, transferring the thin layer of tungsten disulfide to the substrate with Polydimethylsiloxane (PDMS), separating PDMS and substrate, transferring thin layer of tungsten diselenide to the tungsten disulfide thin layer with PDMS, heating to prepare tungsten disulfide-tungsten diselenide isothermal texture, transferring two graphene sheets on the tungsten diselenide thin layer and tungsten disulfide thin layer to obtain graphene/tungsten disulfide-tungsten diselenide heterojunction/graphene, placing resultant substrate on a glue dispenser, absorbing photoresist, dripping on a silicon wafer, heating, photoetching electrodes on two graphene sheets, performing electron beam evaporation of chromium/titanium layer and gold layer on the electrodes, soaking resultant monolithic substrate in acetone, removing photoresist, washing, drying, and annealing.