▎ 摘　　要

NOVELTY - Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing the 6H-4H-silicon carbide carbon surface, cleaning and cutting to obtain 6H-4H-silicon carbide wafer having thickness of 300-400 microns. The 6H-4H-silicon carbide wafer is placed in the chemical vapor deposition (CVD) furnace chamber at 1200-1300 degrees C under 1-3/asterisk10(-4) Pascal for 5-20 minutes, where face of carbon surface is up in direction. The high purity argon and hydrogen is passed into the furnace chamber at 1550-1750 degrees C under 100-800 millibar. USE - Method for preparing graphene on 6H-4H-silicon carbide metal composite substrate (claimed). ADVANTAGE - The method enables to prepare graphene on 6H-4H-silicon carbide metal composite substrate avoids damage to graphene by CVD method during the process of transfer of layer number for growing graphene on the carbon surface and provides good quality of graphene. DETAILED DESCRIPTION - Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing the 6H-4H-silicon carbide carbon surface, cleaning and cutting to obtain 6H-4H-silicon carbide wafer having thickness of 300-400 microns. The 6H-4H-silicon carbide wafer is placed in the chemical vapor deposition (CVD) furnace chamber at 1200-1300 degrees C under 1-3/asterisk10(-4) Pascal for 5-20 minutes, where face of carbon surface is up in direction. The high purity argon and hydrogen is passed into the furnace chamber at 1550-1750 degrees C under 100-800 millibar. The silicon carbide substrate of 6H-4H-silicon carbide wafer is subjected to hydrogen etching for 10-60 minutes and cooled to room temperature. The carbon substrate is deposited on the silicon carbide substrate with the thickness of 5-200 nanometer to obtain 6H-4H-SiC metal composite substrate. The 6H-4H-SiC metal composite substrate is placed in a CVD rapid growth furnace with carbon surface facing upwards at at 1200-1300 degrees C under 1-3/asterisk10(-4) Pascal for 1-5 minutes. The high purity argon and hydrogen is passed into the furnace chamber at 1650-1850 degrees C under 600-800 millibar for 10-30 minutes for growing graphene and passed argon gas to reduce temperature to 800-900 degrees C. The obtained product is cooled to room temperature and subjected to grow graphene on the 6H-4H-SiC metal composite substrate to obtain graphene on 6H-4H-silicon carbide metal composite substrate. The graphene on 6H-4H-silicon carbide metal composite substrate is mixed in the mixed solution of ferric chloride and hydrochloric acid or nitric acid, washed with alcohol and dried to obtain desired product.