• 专利标题:   Production of graphene quantum dot solid sheets for use as replacement of silicon in opto-electronic devices, e.g. field effect transistors, involves using molecular precursors which include materials under standard hydrothermal conditions.
  • 专利号:   IN201741036410-A
  • 发明人:   NATARAJ D, BHARATHI G, SENTHILKUMAR K
  • 专利权人:   UNIV BHARATHIAR
  • 国际专利分类:   B01J031/04, C07C235/00
  • 专利详细信息:   IN201741036410-A 27 Oct 2017 B01J-031/04 201801 Pages: 19 English
  • 申请详细信息:   IN201741036410-A IN41036410 13 Oct 2017
  • 优先权号:   IN41036410

▎ 摘  要

NOVELTY - Graphene quantum dot solid sheets are produced by using molecular precursors which include materials under standard hydrothermal conditions. USE - Production of graphene quantum dot solid sheets for use as replacement of silicon in opto-electronic devices including, but not limited to, solar cells, field effect transistors, and electronic switching circuits, and used for processes of quantum computing (all claimed). ADVANTAGE - The graphene quantum dot solid sheets have magnetic properties and intrinsic optical absorption and photoluminescence emission in the UV and visible region of the electromagnetic spectrum, conferring it with magneto optoelectronic and optoelectronic properties. Strong intrinsic photoluminescence can be induced using other luminescent materials, provided the energy transfer conditions are satisfied. In addition, the graphene quantum dot solid sheets are capable of producing stable intrinsic photoluminescence irrespective of environmental conditions, such as pH. Excited electrons can be easily transferred from one domain of the solid sheet to the adjacent domain, so that the excited electrons can easily travel to the electrodes.