▎ 摘　　要

NOVELTY - The detector has a substrate (1), a gallium nitride (GaN) film (2), a Gallium oxide (Ga2O3) film (3) and a conductive semiconductor layer (4) that are arranged from bottom to top in sequence. The GaN film forms a Ga2O3thin film i-layer by thermal oxidation. The Ga2O3thin film i-layer obtains a lower background carrier density. An upper part of the conductive semiconductor layer is provided with a first metal electrode (5). The conductive semiconductor layer and the first metal electrode forms an ohmic contact, where the conductive semiconductor layer is made of graphene oxide, nickel oxide, cuprous oxide, polyaniline, polypyrrole and N-type or P-type semiconductor material. An upper exposed area of the GaN film is provided with a second metal electrode (6). The GaN film forms an ohmic contact with the second metal electrode. USE - Pin heterojunction ultraviolet photo-diode detector. Can be used in missile early warning, space secret communication, ozone monitoring, high voltage power grid monitoring and military and livelihood field. ADVANTAGE - The detector reduces leakage current of a device in working process, and effectively improves an ultraviolet light absorption rate and photo-generated carrier separation efficiency, so as to improve light detection performance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: a method for manufacturing a pin heterojunction ultraviolet photo-diode detector; and a method for manufacturing a graphene gallium oxide gallium nitride pin heterojunction photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure of a pin heterojunction ultraviolet photo-diode detector. 1Substrate 2Gallium nitride film 3Gallium oxide film 4Conductive semiconductor layer 5First metal electrode 6Second metal electrode