▎ 摘　　要

NOVELTY - Making (M1) a three-dimensional (3D)-shaped 3D graphene (3D2G), comprises: (a) 3D printing a catalyst slurry via Direct Ink Writing (DIW); (b) depositing the printed slurry using chemical vapor deposition (CVD) to produce a nickel-graphene composite; and (c) etching the nickel-graphene composite, where the resulting composite is a porous, binder-free structure of 3D2G. USE - The method is useful for making a three-dimensional-shaped 3D graphene. ADVANTAGE - None given. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: device comprising 3D2G produced using the method, where the device comprises energy storage devices, thermoelectric devices, membranes for separation, fluid filters, gas sensors, pressure sensors or motion sensors; making (M2) a compressed 3D shaped 3D graphene (C3D2G), comprising compressing 3D2G prepared using the process, where the compression is accomplished using either rolling compression or static vertical compression to produce C3D2G; making (M3) a compressed 3D shaped 3D graphene (C3D2G) comprising compressing 3D2G prepared using the process, where the compression is accomplished by extruding the 3D2G through a nozzle to produce C3D2G; product comprising C3D2G prepared using the process, where the product comprises tubes, bars, and wires with a round or rectangular cross-section; making (M4) composite materials by compressing one or multiple layers of 3D graphene (3DG) or 3D2G with another carbon-containing material, where the layers of graphene and material are laminated in a sandwich-like structure; making (M5) a fused piece of 3DG or 3D2G comprising compressing multiple pieces of 3DG or 3D2G simultaneously, where the compression is accomplished using either rolling compression or static vertical compression to produce a single fused piece; and etching (M6) a pattern on a substrate, comprising (a) placing a patterned mask on the substrate, (b) etching the substrate by Reactive Ion Etching in a fluorine plasma environment, and (c) removing the patterned mask from the substrate, where the patterned mask comprises C3D2G made by compressing 3D2G prepared using the process, the compression is accomplished using either rolling compression or static vertical compression to produce C3D2G.