▎ 摘　　要

NOVELTY - Formation of graphene layer comprises establishing insulating layer on substrate such that at least one seed region is formed; and exposing a seed material in the seed region to a carbon-containing precursor gas to initiate nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer. USE - Method for forming a graphene layer (claimed). ADVANTAGE - The method enables growth of graphene layers over relatively large areas/sections/portions using epitaxial growth techniques. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a structure comprising a substrate, an insulating layer including seed region(s) and established on the substrate, a seed material at the seed region, and a graphene layer extending from the seed material laterally along at least a portion of a surface of the insulating layer. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram of the method for forming a graphene layer. Establishing insulating layer on substrate (100) Exposing seed material to carbon-containing precursor gas (102)