• 专利标题:   Graphene transistor for low-noise amplifier, has source and drain electrodes formed on gate electrode through metal contact layer, and graphene thin film formed on source electrode, drain electrode and grid electrode.
  • 专利号:   CN102868370-A, CN102868370-B
  • 发明人:   LV H, QIAN H, WU X, WU H, XIAO K
  • 专利权人:   UNIV TSINGHUA
  • 国际专利分类:   H01L029/78, H03F001/26
  • 专利详细信息:   CN102868370-A 09 Jan 2013 H03F-001/26 201326 Pages: 8 Chinese
  • 申请详细信息:   CN102868370-A CN10331572 07 Sep 2012
  • 优先权号:   CN10331572

▎ 摘  要

NOVELTY - The graphene transistor has a drain electrode connected between a first inductor and a first capacitor. The first inductor is in parallel with the first capacitor. A source electrode is placed between a second inductor and a second capacitor, where the second inductor is connected in parallel with the second capacitor. A metal contact layer is placed on an interlayer medium layer, and the source electrode and the drain electrode are formed on the gate electrode through the metal contact layer. A graphene thin film formed on the source electrode, the drain electrode, and the grid electrode. USE - Graphene transistor for a low-noise amplifier. ADVANTAGE - The amplifier is low in noise, stable, and reliable. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene transistor.