▎ 摘　　要

NOVELTY - The invention claims a crucible for growing a two-dimensional semiconductor material. The crucible comprises a crucible cover and a crucible base, the crucible cover comprises a cover plate and a cover side wall, the crucible base comprises a bottom plate and a bottom side wall, the cover side wall and the bottom side wall contact set to form a containing cavity between the cover plate and the bottom plate; the crucible cover further comprises a connecting part and a plurality of first holes, the connecting part is located at one side of the cover plate away from the containing cavity, each first hole is cover plate and connected with the containing cavity, a plurality of first holes are distributed along the circumference of the geometric centre of the cover plate, the diameter of the first hole is less than 10mm. The detachable design of the crucible makes the crucible not only can be used for closed crucible of silicon carbide epitaxial graphene, but also can be used for metal substrate epitaxial graphene or open crucible of boron nitride. it also can independently deposit silicon atoms on the crucible cover, improve the controllability of the silicon carbide epitaxial graphene process, also can pre-process the sample or substrate on the crucible base after splitting, improve the production efficiency.