▎ 摘　　要

NOVELTY - The transistor has a carbon film comprising several graphene films (12) formed in the active region. The width of the carbon film of the side near the source electrode (15) of a channel region in active region is wider than the width of the carbon film of side near the drain electrode (16) of the channel region. USE - Graphene transistor such as n and p channel type graphene FET and npn and pnp type graphene lateral heterojunction bipolar transistor (HBT) for electronic device (claimed). ADVANTAGE - The performance of the transistor and the electronic device are improved, and the characteristic of the channel layer at each place can be optimized. The increase of the effective mass of the transistor can be suppressed. DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory view of the graphene FET. (Drawing includes non-English language text) Insulated substrate (11) Graphene film (12) Gate insulating film (13) Source electrode (15) Drain electrode (16)