• 专利标题:   Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.
  • 专利号:   WO2015088478-A1, US2016297682-A1, US9919929-B2
  • 发明人:   ANDERSON K, SJONG A
  • 专利权人:   EMPIRE TECHNOLOGY DEV LLC, EMPIRE TECHNOLOGY DEV LLC
  • 国际专利分类:   H01B001/22, H01L021/02, B05D001/00, B05D001/02, B05D001/18, B05D001/28, C01B031/04, H01J037/32, H01L021/04, H01L029/16, B32B003/00, C01B032/194, H01L021/3065, H01L021/308
  • 专利详细信息:   WO2015088478-A1 18 Jun 2015 H01L-021/02 201544 Pages: 34 English
  • 申请详细信息:   WO2015088478-A1 WOUS073886 09 Dec 2013
  • 优先权号:   WOUS073886, US15100616

▎ 摘  要

NOVELTY - The etching method (100) involves providing (110) patterned substrate comprising one or more hydrophobic regions and hydrophilic regions patterned on surface of patterned substrate, disposing (120) graphene on the surface of patterned substrate, and applying (130) a resist to surface of graphene opposite to the patterned substrate. The exposed portions of graphene are etched (150) to form one or more etched graphene structures. USE - Etching method of graphene. ADVANTAGE - Obtains the desired adhesion pattern for the surfactant based on observed selectivity since the pattern for the substrate can be readily configured. Prevents or reduces etching of portions of the graphene by providing cured resist layer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a graphene composite; and (2) a making system of etched graphene system. DESCRIPTION OF DRAWING(S) - The drawing shows the flow diagram illustrating the method of etching graphene. Etching method (100) Patterned substrate providing step (110) Graphene disposing step (120) Resist applying step (130) Resist curing step (140) Exposed portion etching step (150) Resist removing step (160)