▎ 摘　　要

NOVELTY - The device has a first metal gate electrode (5) and a second metal gate electrode (6) connected with a periodic arrangement unit structure, where the periodic arrangement unit structure is located with an upper part of a low-doped high-resistance silicon substrate (4) and a silicon dioxide layer. The periodic arrangement unit structure is provided with a first patterned metal, a graphene structure (1), a polyimide layer (2), a second patterned metal and a graphene structure (3). The first metal gate electrode and the second metal gate electrode are respectively connected with two graphene strips through dual-opening metal resonance loop. USE - Selective electrostatic doped graphene based dynamic controllable terahertz ring dipole material device. ADVANTAGE - The device is simple and complex in structure, convenient to apply and easy to control, and has low required energy. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a selective electrostatic doped graphene based dynamic controllable terahertz ring dipole material manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a selective electrostatic doped graphene based dynamic controllable terahertz ring dipole material device. Graphene structure (1) Polyimide layer (2) Graphene structure (3) Low-doped high-resistance silicon substrate (4) Metal gate electrode (5,6)