▎ 摘　　要

NOVELTY - The method involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate, where the first growth process uses a reaction gas that has a carbon source. A second growth process of forming a graphene layer is performed by growing multiple graphene aggregates at a second growth rate slower than the first growth rate. The second growth process uses the reaction gas with the carbon source. The carbon source in the first growth process has a first partial pressure. The carbon source in the second growth process has a second partial pressure. USE - Method for forming graphene. ADVANTAGE - High quality graphene with uniform flatness can be formed on the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of a method for forming graphene. Preparing substrate (S101) Growing graphene aggregates (S102) Forming graphene layer (S103)