• 专利标题:   Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.
  • 专利号:   US2021163296-A1, KR2021069474-A
  • 发明人:   CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B032/186, C01B032/182, H01L021/02, H01L021/324, H01L029/16
  • 专利详细信息:   US2021163296-A1 03 Jun 2021 C01B-032/186 202163 English
  • 申请详细信息:   US2021163296-A1 US060893 01 Oct 2020
  • 优先权号:   KR159352

▎ 摘  要

NOVELTY - The method involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate, where the first growth process uses a reaction gas that has a carbon source. A second growth process of forming a graphene layer is performed by growing multiple graphene aggregates at a second growth rate slower than the first growth rate. The second growth process uses the reaction gas with the carbon source. The carbon source in the first growth process has a first partial pressure. The carbon source in the second growth process has a second partial pressure. USE - Method for forming graphene. ADVANTAGE - High quality graphene with uniform flatness can be formed on the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of a method for forming graphene. Preparing substrate (S101) Growing graphene aggregates (S102) Forming graphene layer (S103)