▎ 摘　　要

NOVELTY - The electrode has a substrate (1) coated with ink that comprises oxidation graphene nano ribbon by performing inkjet process. A source electrode (5) and a drain electrode (6) are arranged in a predetermined spacing on the substrate. An insulating layer (3) is formed between the source electrode and the drain electrode. An organic-semiconductor layer (2) is formed on the substrate. A gate electrode (4) comprising graphene nano ribbon is arranged over the source electrode and the drain electrode. USE - Electrode for organic-semiconductor elements such as field effect-type organic TFT that is utilized in a planar light source and display apparatus, an organic electroluminescent element and a photoelectric conversion element that is utilized in a solar cell module and an image sensor (all claimed). Uses include but are not limited to a viewfinder of a computer, a TV, a portable terminal, a mobile telephone, a car navigation system and a video camera. ADVANTAGE - The substrate is coated with the ink that comprises oxidation graphene nano ribbon by performing the inkjet process, so that sufficient field effect mobility can be easily obtained with low cost. DETAILED DESCRIPTION - The gate electrode is made of metal such as gold, platinum, silver, copper, chromium, palladium, aluminum, indium, molybdenum, low resistance poly-silicon, low resistance amorphous silicon, tin oxide, indium oxide and indium-tin oxide. INDEPENDENT CLAIMS are also included for the following: (1) an electrode manufacturing method (2) an organic thin-film transistor (TFT) manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a field effect-type organic TFT. Substrate (1) Organic-semiconductor layer (2) Insulating layer (3) Gate electrode (4) Source electrode (5) Drain electrode (6)