• 专利标题:   Manufacture of catalyst metal layer for manufacturing graphene raw material used for transistor, involves forming film of catalyst metal, heating catalyst metal in high-temperature area and reducing temperature of catalyst metal.
  • 专利号:   WO2013129312-A1, US2014363363-A1, JP2014502206-X, US9254477-B2, JP5896494-B2
  • 发明人:   NARITSUKA S, MARUYAMA T
  • 专利权人:   UNIV MEIJO, NARITSUKA S, MARUYAMA T, UNIV MEIJO
  • 国际专利分类:   B01J023/755, B01J035/02, B01J037/08, C01B031/02, C01B031/04, B01J035/00, B82Y030/00, B82Y040/00
  • 专利详细信息:   WO2013129312-A1 06 Sep 2013 B01J-023/755 201362 Pages: 56 Japanese
  • 申请详细信息:   WO2013129312-A1 WOJP054762 25 Feb 2013
  • 优先权号:   JP040554

▎ 摘  要

NOVELTY - A film of catalyst metal having function which accelerates graphenization is formed on a substrate (12). The catalyst metal is heated to rising temperature in a high-temperature area. The catalyst metal is temperature-fallen from rising temperature to low-temperature area where misfit dislocation is introduced between substrate and catalyst metal. The temperature of catalyst metal makes crystallize the catalyst metal in state such that the upper limit of low-temperature area is less, to obtain catalyst metal layer (14,16,17). USE - Manufacture of catalyst metal layer used for manufacturing graphene raw material (claimed) for transistor and electrical wiring. ADVANTAGE - The method enables manufacture of catalyst metal layer having large area, within short period of time. DETAILED DESCRIPTION - A film of catalyst metal having function which accelerates graphenization is formed on a substrate. The catalyst metal is heated to rising temperature in a high-temperature area which is area where adjustment of catalyst metal and substrate is good. The temperature of catalyst metal is fallen from rising temperature to low-temperature area where misfit dislocation is introduced between substrate and catalyst metal. The temperature is fallen such that at least one conditions comprising temperature is fallen with temperature decrease rate of 2 degrees C/minute or more and the temperature of catalyst metal is in medium-temperature area which is area having temperature which is more than the low-temperature area and less than the rising temperature and/or temperature of catalyst metal is in medium-temperature area for less than 50 minutes, is satisfied. The temperature of catalyst metal makes crystallize the catalyst metal in state such that the upper limit of low-temperature area is less, to obtain catalyst metal layer. An INDEPENDENT CLAIM is included for manufacture of graphene raw material (10), which involves supplying carbon source to surface of catalyst metal layer. DESCRIPTION OF DRAWING(S) - The drawing shows the perspective view of the graphene raw material. (Drawing includes non-English language text) Graphene raw material (10) Substrate (12) Catalyst metal layers (14,16,17) Straight portions (16a,16c,16e,16g,16i,16k) Electrodes (18,20)