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  • 专利标题:   Hollow graphene-loaded nano-tin disulfide composite used for electrode material, comprises hollow graphene microspheres as carrier, and tin disulfide nanoparticles having preset size, supported on inner and outer walls of microspheres.
  • 专利号:   CN105621355-A, CN105621355-B
  • 发明人:   CHEN F, GAO Q, GAO Y, JIAO Z, JIANG Y, WANG Z, ZHAO B, YANG Y
  • 专利权人:   UNIV SHANGHAI
  • 国际专利分类:   B82Y030/00, H01M010/0525, H01M004/36, H01M004/58, H01M004/587, H01M004/62
  • 专利详细信息:   CN105621355-A 01 Jun 2016 B82Y-030/00 201664 Pages: 8 Chinese
  • 申请详细信息:   CN105621355-A CN10130529 08 Mar 2016
  • 优先权号:   CN10130529

▎ 摘　　要

NOVELTY - A hollow graphene-loaded nano-tin disulfide composite comprises hollow graphene microspheres as carrier, and tin disulfide nanoparticles supported on inner and outer walls of the graphene hollow microspheres. The size of the tin disulfide particles grown on the surface of the hollow graphene microspheres is 10-40 nm. USE - Hollow graphene-loaded nano-tin disulfide composite is used for electrode material. ADVANTAGE - The hollow graphene-loaded nano-tin disulfide composite has excellent structural stability and ion conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of hollow graphene-loaded nano-tin disulfide composite.