• 专利标题:   Preparing graphene single-crystal involves carrying out low pressure chemical vapor deposition for growing copper foil on substrate, utilizing methane as reaction precursor and hydrogen as reducing gas, and cleaning copper foil.
  • 专利号:   CN105439126-A, CN105439126-B
  • 发明人:   FU P, LI M, LI R, YU T, CHEN J, SHAO X
  • 专利权人:   UNIV NORTH CHINA ELECTRIC POWER
  • 国际专利分类:   C01B031/04, C01B032/186
  • 专利详细信息:   CN105439126-A 30 Mar 2016 C01B-031/04 201643 Pages: 7 English
  • 申请详细信息:   CN105439126-A CN10439978 01 Sep 2014
  • 优先权号:   CN10439978

▎ 摘  要

NOVELTY - Preparing graphene single-crystal involves carrying out low pressure chemical vapor deposition for growing copper foil on the substrate. The methane is utilized as reaction precursor and hydrogen is utilized as reducing gas. The copper foil is cleaned with polishing liquid and heated to ensure that no gas acts as a barrier. The copper foil is annealed for 2-3 hours to obtain graphene single-crystal having 1mm large specific area. USE - Method for preparing graphene single-crystal (claimed). ADVANTAGE - The method enables to prepare graphene single-crystal in simple manner that has low number of defects.