▎ 摘　　要

NOVELTY - Producing graphene, comprises introducing carbon or a carbon compound into a carrier material, contacting the carrier material with a stabilizing material, completely or partially converting the carrier material into a chemical compound with the stabilizing material by a temperature treatment at greater than or equal to 200 degrees C, preferably greater than or equal to 500 degrees C, and segregating carbon from the carrier material by a temperature treatment, for forming graphene. USE - The method is useful for producing graphene (claimed). ADVANTAGE - The method comprises the formation of the chemical compound which protects the carrier material against damage due to high temperature of the temperature treatment, and homogeneously produces graphene on large surfaces. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the method for producing graphene using silicon on insulator substrate as starting material. Silicon bulk material (101) Oxide layer (102) Silicon layer (103) Nickel layer (104) Graphene layer (106)