▎ 摘　　要

NOVELTY - The method involves forming several carbon nanotubes (400) over a substrate as a first electrode. An insulating layer (500) is formed over the carbon nanotubes. A graphene layer (600) is formed over the insulating layer as a second electrode separated from the first electrode by the insulating layer. A polymer (420) is filled in a gap between the carbon nanotubes after forming the carbon nanotubes. A conductive layer (200) is formed over the substrate prior to forming the carbon nanotubes. A catalyst layer is formed over the substrate prior to forming the carbon nanotubes. A surface treatment operation is preformed on the catalyst layer prior to forming the carbon nanotubes. USE - Method for forming memory device such as resistive RAM (RRAM). ADVANTAGE - The RRAM is used in variety of electronic applications because RRAM is provided with high speed, low power consumption and superior scalability. The carbon-containing materials provide better conductivity to transmit the electric charges and the electrodes made of the carbon-containing materials improve the rate of signal transmission. The rate of electric charges conduction between the nitrogen-doped carbon nanotubes serve as the first electrode and the insulating layer is improved and thus the conductivity of the first electrode is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view for forming memory device. Conductive layer (200) Carbon nanotubes (400) Polymer (420) Insulating layer (500) Graphene layer (600)