▎ 摘　　要

NOVELTY - The method involves providing (S11) a substrate. A nucleation layer is grown (S12) on the substrate. The un-doped gallium nitride (GaN) layer is grown (S13) on the nucleation layer. An n-type GaN layer is grown (S14) on the un-doped GaN layer. A p type GaN layer is grown (S16) on the multiple quantum well layer on the p-type GaN layer growing the graphene layer. The zinc oxide (ZnO) nano cone layer is grown (S18) on the graphene layer. The silver nanoparticle layer is grown (S19) on the ZnO nano-cone layer. USE - Preparation method of epitaxial wafer of light emitting diode. ADVANTAGE - The luminous efficiency is improved and the brightness of the LED is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an epitaxial wafer of light emitting diode. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of method of preparing epitaxial wafer of light emitting diode. (Drawing includes non-English language text) Step for providing a substrate (S11) Step for growing nucleation layer on the substrate (S12) Step for growing un-doped gallium nitride layer on the nucleation layer (S13) Step for growing n-type GaN layer on the un-doped GaN layer (S14) Step for growing p type GaN layer on multiple quantum well layer (S16) Step for growing zinc oxide nano cone layer on the graphene layer (S18) Step for growing silver nanoparticle layer on the ZnO nano-cone layer (S19)