▎ 摘　　要

NOVELTY - The utility model belongs to the technical field of storage, specifically relates to a hafnium oxide-based defect control layer graphene ferroelectric memory, comprising a substrate layer, a gate electrode, a defect control layer, a ferroelectric insulating layer, the graphene layer, the source electrode and the drain electrode; the substrate layer is provided with a gate electrode, the gate electrode is provided with a defect control layer, a defect control layer is provided with a ferroelectric insulating layer, a ferroelectric insulating layer is provided with layers of graphene, a graphene layer is provided with a source electrode and a drain electrode, the defect control layer is made of HfO2. the material of the channel layer is graphene. The utility model claims a small device size, device power consumption, strong capability of resisting fatigue and maintain performance of the device based on hafnium oxide defect control layer graphene ferroelectric memory.