▎ 摘　　要

NOVELTY - Lamination process involves e.g. (i) cleaning the indium tin oxide (ITO) glass substrate, spin-coating tin oxide colloidal precursor solution on the cleaned substrate, and hot plate annealing to form an electron transport layer, deposit a layer of narrow band gap perovskite on the obtained layer to form a narrow band gap perovskite absorption layer, spin-coating a solution of n-butylamine in isopropanol on the absorption layer to form a passivation layer, spin-coating poly(3-hexylthiophene) on the passivation layer to form a hole transport layer, combining together the substrate, electron transport layer, narrow band gap perovskite absorption layer, passivation layer and hole transport layer to form a narrow band gap bottom cell (C1), (ii) forming wide band gap top cell (C2), and (iii) spin-coating conductive glue on the cell (C2) to form an intermediate layer, after inverting the overall structure of the cell (C2) and the intermediate layer, placing on the cell (C1) and laminating. USE - Lamination process used for preparing laminated solar cell. ADVANTAGE - The method effectively avoids solvent damage and physical damage, and contributes to device cost saving. DETAILED DESCRIPTION - Lamination process involves (i) cleaning the indium tin oxide (ITO) glass substrate, spin-coating tin oxide colloidal precursor solution on the cleaned ITO glass substrate, and hot plate annealing to form an electron transport layer, deposit a layer of narrow band gap perovskite on the electron transport layer to form a narrow band gap perovskite absorption layer, spin-coating a solution of n-butylamine in isopropanol on the narrow band gap perovskite absorption layer to form a passivation layer, spin-coating poly(3-hexylthiophene) on the passivation layer to form a hole transport layer, and combining together the ITO glass substrate, electron transport layer, narrow band gap perovskite absorption layer, passivation layer and hole transport layer to form a narrow band gap bottom cell (C1), (ii) using polydimethylsiloxane (PDMS) as the top cell substrate, spin-coating a conductive adhesive on the top cell substrate and heating to prepare the top cell conductive substrate, preparing nickel oxide layer on the conductive substrate as a hole transport layer, spin coating the wide band gap perovskite on the hole transport layer as the wide band gap perovskite absorption layer, and preparing carbon-60 layer on the wide band gap perovskite absorption layer by thermal evaporation, using atomic layer deposition to prepare a layer of tin oxide on carbon-60 layer and combining together carbon-60 layer and tin oxide layer together to form an n-type selective contact layer, and combining the conductive substrate, the hole transport layer, the wide band gap perovskite absorber layer and the n-type selective contact layer together to form a wide band gap top cell (C2), (iii) spin-coating conductive glue on the wide band gap top cell (C2) to form an intermediate layer, (iv) after inverting the overall structure of the wide band gap top cell (C2) and the intermediate layer, placing on the narrow band gap bottom cell (C1), and laminating together by lamination to form a laminated device, and (v) peeling off the PDMS layer of the laminated device to form the top electrode.