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  • 专利标题:   Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.
  • 专利号:   WO2015190807-A1, KR2015142619-A, US2017125320-A1, CN106660801-A, KR1777913-B1, CN106660801-B, US10354935-B2
  • 发明人:   SUNG M, KIM S, MO S M, KIM S J, CHENG M
  • 专利权人:   UNIV HANYANG IUCFHYU, UNIV HANYANG INDACAD COOP INST, UNIV HANYANG IND COOP FOUND, UNIV HANYANG IUCFHYU
  • 国际专利分类:   C01B031/04, H01L021/02, H01L021/78, H01L023/31, H01L029/04, H01L029/16, H01L029/32, C01B032/184, B82Y030/00, B82Y040/00, C01B032/186, C01B032/194, H01L029/06, H01L029/08, H01L031/00
  • 专利详细信息:   WO2015190807-A1 17 Dec 2015 C01B-031/04 201603 Pages: 32
  • 申请详细信息:   WO2015190807-A1 WOKR005790 09 Jun 2015
  • 优先权号:   KR070293, CN80031160

▎ 摘　　要

NOVELTY - A graphene structure comprises a two-dimensional base graphene layer having a defect, and a linking material formed at the defect of the base graphene layer. USE - Graphene structure is used for electronic component e.g. transistor. ADVANTAGE - The graphene structure has excellent electrical characteristics and quantum mechanical property, and is prepared with high reliability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of graphene structure.