• 专利标题:   LED-based photonic crystal-single-layer graphene structure, has single layer graphene layer provided with contact layer and LED chip p-GaN layer that is matched with positive electrode and LED chip n-GaN layer.
  • 专利号:   CN103489982-A, CN103489982-B
  • 发明人:   XU C, XU K, ZHENG L, CHEN M, GE H
  • 专利权人:   UNIV BEIJING TECHNOLOGY
  • 国际专利分类:   H01L033/40
  • 专利详细信息:   CN103489982-A 01 Jan 2014 H01L-033/40 201417 Pages: 10 Chinese
  • 申请详细信息:   CN103489982-A CN10447624 25 Sep 2013
  • 优先权号:   CN10447624

▎ 摘  要

NOVELTY - The structure has a silicon dioxide protection layer (101) provided with a single-layer graphene layer (102) and covered with a positive electrode (100) and a negative electrode (108). The single layer graphene layer is provided with a contact layer (103) and an LED chip p-GaN layer (104) that is matched with the positive electrode and an LED chip n-GaN layer (106). The LED chip n-GaN layer is matched with the negative electrode and arranged on a sapphire substrate (107). The LED chip p-GaN layer is formed with a photonic crystal structure unit. USE - LED-based photonic crystal-single-layer graphene structure. ADVANTAGE - The structure improves light efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an LED-based photonic crystal-single-layer graphene structure. Positive electrode (100) Silicon dioxide protection layer (101) Single-layer graphene (102) Contact layer (103) LED chip p-GaN layer (104) LED chip n-GaN layer (106) Sapphire substrate (107) Negative electrode (108)