▎ 摘　　要

NOVELTY - Photonic memristor comprises a Fabry-Perot cavity formed on an upper surface of a substrate. The Fabry-Perot resonator includes first reflective film formed on an upper surface of the substrate. The second reflective film is located on the top of the first reflective film. The graphene oxide nonlinear dielectric layer is arranged between the first reflective film and the second reflective film. USE - The memristor e.g. full memory resistor is useful in artificial intelligence field including field of semiconductor. ADVANTAGE - The photonic memristor can realize the light space parallel propagation and interconnection in the light exchange to better perform information high density storage, improve the processing speed, low energy consumption, and can be produced in large scale. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: a preparation method of photonic memristor; and a chip. DESCRIPTION OF DRAWING(S) - The drawing shows an incident light intensity-reflected light intensity-characteristics curve diagram of the photonic memristor. 1Substrate 2First reflecting layer 3First isolating layer