• 专利标题:   Manufacture of predominantly amorphous silicon-containing particles for negative electrode, involves heating and cooling precursor gas of silicon-containing compound and precursor gas(s) of substitution element-containing compound.
  • 专利号:   GB2592055-A
  • 发明人:   FILTVEDT W, SAUAR E, KIRKENGEN M
  • 专利权人:   CENATE AS
  • 国际专利分类:   H01M004/38, C01B033/027
  • 专利详细信息:   GB2592055-A 18 Aug 2021 C01B-033/027 202186 English
  • 申请详细信息:   GB2592055-A GB002064 14 Feb 2020
  • 优先权号:   GB002064

▎ 摘  要

NOVELTY - Manufacture of predominantly amorphous silicon-containing particles (I) involves forming a homogeneous gas mixture of a precursor gas (G1) of a silicon-containing compound and at least one precursor gas (G2) of a substitution element (M)-containing compound, injecting the homogeneous gas mixture into a reactor space where the precursor gases are heated to 700-900degrees Celsius so that the precursor gases react and form particles, and collecting and cooling the particles from ambient temperature up to 350degrees Celsius. The relative amount of gases (G1) and (G2) are adapted such that the formed particles obtain an element (M)/silicon atomic ratio of 0.005-0.05. USE - Manufacture of predominantly amorphous silicon-containing particles used as particulate active material or secondary particles of negative electrode (all claimed) used for secondary lithium-ion electrochemical cell. ADVANTAGE - The method produces predominantly amorphous silicon-containing particles which are capable of effectively improving charge/discharge cycle characteristics of the electrochemical cell. DETAILED DESCRIPTION - Manufacture of predominantly amorphous silicon-containing particles of formula: Si(1-x)Mx (I) involves forming a homogeneous gas mixture of a precursor gas (G1) of a silicon-containing compound and at least one precursor gas (G2) of a substitution element (M)-containing compound, injecting the homogeneous gas mixture into a reactor space where the precursor gases are heated to 700-900degrees Celsius so that the precursor gases react and form particles, and collecting and cooling the particles from ambient temperature up to 350degrees Celsius. The relative amount of gases (G1) and (G2) are adapted such that the formed particles obtain an element (M)/silicon atomic ratio of 0.005-0.05. x = 0.005-0.05 (excluding 0.05); and M = Al, B, C, Ga, Ge, N, Sn, P, Ph, and/or S. INDEPENDENT CLAIMS are included for the following: (i) the predominantly amorphous silicon-containing particles, which exhibit one peak at around 28degrees and one peak at around 52degrees in XRD-analysis. The both peaks have a full width at half maximum of at least 5degrees; (ii) a negative electrode, which comprises a particulate active material, a particulate conductive filler material, a binder material, and a current-collecting substrate. The particulate active material and particulate conductive filler material are mixed and embedded in the binder material. The particulate active material and particulate conductive filler material embedded in the binder material is coated onto the current-collecting substrate. The particulate active material is the predominantly amorphous silicon-containing particles; and (iii) secondary particles for the negative electrode, which comprise the predominantly amorphous silicon-containing particles, and a predominantly carbon-containing material made by pyrolysis of a carbon rich material, or an elastic carbon-containing polymer, or graphene or reduced graphene oxide.