▎ 摘　　要

NOVELTY - The method involves placing a substrate for growing an AlN layer on a substrate slice. A graphene buried radiating layer is deposited on the AlN layer. An AlN insulation layer is formed in a GAN buffer layer, a channel layer and an AlGAN barrier layer. GaN and MMIC device is manufactured. The buried radiating layer is arranged after source electrode. A whole device active area edge is etched to expose the buried radiating layer and connecting with the devices. A metal is sintered to a rear board and a heat sink. The substrate and the ALN insulation layer are formed with the ALN layer. USE - GAN MMIC device manufacturing method. ADVANTAGE - The method enables avoids complex process in rear surface, realize front direct source- ground by utilizing graphene thermal conductivity, generating heat conduct in a device active region, and reducing high-power and temperature in GAN device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a GAN MMIC device. '(Drawing includes non-English language text)'