• 专利标题:   Layer structure for electronic device, has material layers which are on sides of diffusion barrier layer and diffusion barrier layer includes nano-crystalline graphene layer.
  • 专利号:   US2016240482-A1, KR2016100711-A, US10229881-B2
  • 发明人:   SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J, SONG H J, NAM S G, CHO Y C, PARK S J, SHIN H J, LEE J H
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/768, H01L023/532, C01B031/04, H01L021/28, H01L021/3205, H01L029/16, H01L049/02, H01L023/48, H01L023/522
  • 专利详细信息:   US2016240482-A1 18 Aug 2016 H01L-023/532 201657 Pages: 14 English
  • 申请详细信息:   US2016240482-A1 US814938 31 Jul 2015
  • 优先权号:   KR023540

▎ 摘  要

NOVELTY - The layer structure has a diffusion barrier layers (76,80,90). A first material layer is on a side of the diffusion barrier layer. A second material layer is on another side of the diffusion barrier layer. The diffusion barrier layer includes a nano-crystalline graphene layer and also comprises a non-graphene metal compound layer, graphene layer and metal layer. The first material layer comprises a trench and the diffusion barrier layer covers a surface of the trench. USE - Layer structure for electronic device. ADVANTAGE - The layer structure having a diffusion barrier layer reduces resistance increment according to a critical dimension reduction and prevents an unnecessary material from diffusing into peripheral regions. The reduction of characteristics of the corresponding electronic devices is reduced or prevented. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a layer structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating a layer structure. Lower layer (70) Diffusion barrier layers (76,80,90) Intermediate layer (88) Insulating layer (92) Dotted box (102)