• 专利标题:   Preparing graphene on substrate for transistor, involves grinding catalyst powder with organic adhesive to obtain slurry; coating slurry on substrate, followed by drying, placing in high temperature atmosphere furnace; and annealing.
  • 专利号:   CN103213976-A, CN103213976-B
  • 发明人:   YANG Y, ZHANG Y, FU D
  • 专利权人:   SHAXI COAL CHEM IND INST TECHNOLOGY LLC
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103213976-A 24 Jul 2013 C01B-031/04 201377 Pages: 15 Chinese
  • 申请详细信息:   CN103213976-A CN10141267 22 Apr 2013
  • 优先权号:   CN10141267

▎ 摘  要

NOVELTY - A method of preparing graphene directly on the surface of substrate, involves: (1) selecting a substrate; (2) grinding catalyst powder with organic adhesive to obtain catalyst slurry; (3) coating the catalyst slurry on the surface of the substrate using spin coating and drying at room temperature; (4) placing the spin-coated substrate in a high temperature atmosphere in vacuum furnace, and passing gas, and raising the temperature to the graphene growth temperature to obtain graphene thin film; and (5) in reducing atmosphere, annealing the substrate at high temperature. USE - In preparing graphene directly on the surface of substrate (claimed) for flat panel display, transistor, microelectronic and optoelectronic device. ADVANTAGE - The method provides graphene product having low density, and high electrical conductivity.