▎ 摘　　要

NOVELTY - Method for directly growing graphene thin film on surface of non-metallic substrate, involves (a) depositing aluminum oxide film on surface of substrate to obtain substrate for depositing aluminum oxide film, (b) evaporating copper film on surface of substrate deposited with aluminum oxide film to obtain copper-plated substrate, (c) annealing copper-plated substrate in reducing atmosphere to obtain substrate compounded with single crystal phase copper film, and (d) growing graphene by chemical vapor deposition on surface of substrate compounded with single crystal phase copper film, and sequentially removing graphene and copper film on surface of copper film to obtain substrate growing with graphene. USE - Method for directly growing graphene thin film on surface of non-metallic substrate. ADVANTAGE - The method utilizes the higher lattice matching degree and higher flatness of aluminum oxide and graphene, improves the flatness, defect degree and integrity of obtained graphene film, controls partial pressure of carbon source and growth time, and controls the quality and number of layers of graphene.