▎ 摘　　要

NOVELTY - Formation of two-dimensional material involves forming (S12) an amorphous film on a substrate, modifying (S13) surface of the amorphous film, and supplying (S14) a raw material of two-dimensional material onto the modified amorphous film. USE - Formation of two-dimensional material e.g. hexagonal boron nitride, transition-metal dichalcogenide and graphene (all claimed) used as electronic device material. ADVANTAGE - The method provides two-dimensional material having large crystal grain size. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of formation of graphene. (Drawing includes non-English language text) Forming step of underlayer (S11) Forming step of amorphous film (S12) Modifying step of amorphous film (S13) Supplying step of raw material of graphene (S14)