• 专利标题:   Formation of two-dimensional material e.g. graphene, involves forming amorphous film on substrate, modifying surface of amorphous film, and supplying raw material of two-dimensional material onto modified amorphous film.
  • 专利号:   WO2018008438-A1
  • 发明人:   IFUKU R, MATSUMOTO T
  • 专利权人:   TOKYO ELECTRON LTD
  • 国际专利分类:   C01B032/186, C23C016/26
  • 专利详细信息:   WO2018008438-A1 11 Jan 2018 C01B-032/186 201811 Pages: 32 Japanese
  • 申请详细信息:   WO2018008438-A1 WOJP023340 26 Jun 2017
  • 优先权号:   JP135295

▎ 摘  要

NOVELTY - Formation of two-dimensional material involves forming (S12) an amorphous film on a substrate, modifying (S13) surface of the amorphous film, and supplying (S14) a raw material of two-dimensional material onto the modified amorphous film. USE - Formation of two-dimensional material e.g. hexagonal boron nitride, transition-metal dichalcogenide and graphene (all claimed) used as electronic device material. ADVANTAGE - The method provides two-dimensional material having large crystal grain size. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of formation of graphene. (Drawing includes non-English language text) Forming step of underlayer (S11) Forming step of amorphous film (S12) Modifying step of amorphous film (S13) Supplying step of raw material of graphene (S14)