▎ 摘　　要

NOVELTY - The method involves forming a graphene precursor on a first portion of a common semiconductor substrate. A graphene layer is formed on the graphene precursor. A semiconductor device (412) is formed on a second portion of the common semiconductor substrate, where forming the graphene precursor comprises exposing the first portion of the common semiconductor substrate to a flux of acetylene or carbon beam. A masking layer is formed on the common semiconductor substrate. The masking layer is patterned to form an opening in the first portion of the common semiconductor substrate. USE - Method for manufacturing an electronic device (claimed). Uses include but are not limited to a mobile device such as mobile phone, tablet computer, laptop personal computer, and desktop personal computer, media playback device, and a TV. ADVANTAGE - The method enables utilizing a graphene-based matching circuit that exhibits a better frequency response, which is particularly advantageous at high frequencies despite high-power consumption of graphene-based transistors. The method enables allowing graphene to be obtained by low-cost process for selective graphitization of portions of semiconductor substrates, thus providing high yield with high predictability than graphitization by mechanical exfoliation of the graphene from graphite. DETAILED DESCRIPTION - The graphene layer is an antenna. An INDEPENDENT CLAIM is also included for an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an electronic device with a graphene device and a semiconductor device formed on a common semiconductor substrate. Electronic device (400c) Semiconductor device (412) Graphene device (414A)