• 专利标题:   Multi-layer graphene vertical interconnection structure manufacturing method, involves utilizing graphene layer for manufacturing catalyst layer, and utilizing catalytic layer for providing vertical hole filling effect.
  • 专利号:   CN102569183-A, CN102569183-B
  • 发明人:   CHEN J, FANG R, JIN Y, MA S, MIU M, SUN X, ZHU Y
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   H01L021/768
  • 专利详细信息:   CN102569183-A 11 Jul 2012 H01L-021/768 201262 Pages: 26 Chinese
  • 申请详细信息:   CN102569183-A CN10053684 02 Mar 2012
  • 优先权号:   CN10053684

▎ 摘  要

NOVELTY - The method involves forming a vertical hole on a substrate (S101). A catalytic layer is utilized for forming a surface of the substrate (S102). A catalytic layer is utilized for covering an inner surface of the vertical hole (S103). A graphene layer is utilized for forming the catalyst layer (S104). The catalytic layer is utilized for providing a vertical hole filling effect (S105). USE - Multi-layer graphene vertical interconnection structure manufacturing method. ADVANTAGE - The method enables improving vertical hole filling effect and electric signal transmission performance of vertical interconnection structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a multi-layer graphene vertical interconnection structure manufacturing method.'(Drawing includes non-English language text)' Step for forming a vertical hole on a substrate (S101) Step for forming a surface of the substrate (S102) Step for covering an inner surface of the vertical hole (S103) Step for forming the catalyst layer (S104) Step for providing a vertical hole filling effect (S105)